Title :
Charge Pumping at Radio Frequencies: Methodology, Trap Response and Application
Author :
Sasse, G.T. ; Schmitz, J.
Author_Institution :
MESA Inst. for Nanotechnology, Twente Univ., Enschede
Abstract :
The charge pumping (CP) technique is known for its high accuracy of determining the interface state density on MOS devices according to G. Groeseneken et al. (1984). With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [Masson, P et al., 1999]. In this paper we discuss the applicability of the RF CP technique for extracting the interface state density on these dielectrics. We present an improved measurement approach, new data, and an improved model for the description of the RF CP response of fast interface states
Keywords :
MIS devices; dielectric materials; interface states; tunnelling; MOS devices; fast interface states; interface state density; oxide thickness reduction; radio frequency charge pumping; trap response; tunneling current; Charge measurement; Charge pumps; Current measurement; Dielectric measurements; Interface states; RF signals; Radio frequency; Signal generators; Tunneling; Voltage; RF; charge pumping; trap response; tunneling;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251295
