Charge Pumping at Radio Frequencies: Methodology, Trap Response and Application

Author

Sasse, G.T. ; Schmitz, J.

Author_Institution

MESA Inst. for Nanotechnology, Twente Univ., Enschede

fYear

2006

fDate

26-30 March 2006

Firstpage

627

Lastpage

628

Abstract

The charge pumping (CP) technique is known for its high accuracy of determining the interface state density on MOS devices according to G. Groeseneken et al. (1984). With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [Masson, P et al., 1999]. In this paper we discuss the applicability of the RF CP technique for extracting the interface state density on these dielectrics. We present an improved measurement approach, new data, and an improved model for the description of the RF CP response of fast interface states

Keywords

MIS devices; dielectric materials; interface states; tunnelling; MOS devices; fast interface states; interface state density; oxide thickness reduction; radio frequency charge pumping; trap response; tunneling current; Charge measurement; Charge pumps; Current measurement; Dielectric measurements; Interface states; RF signals; Radio frequency; Signal generators; Tunneling; Voltage; RF; charge pumping; trap response; tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251295

Filename

4017236