Ferroelectric memory applications

Author

Scott, J.F. ; Araujo, C.A. ; McMillan, L.D.

Author_Institution

Colorado Univ., Boulder, CO, USA

fYear

1989

fDate

3-6 Oct 1989

Firstpage

299

Abstract

Recent applications of ferroelectric thin-film memory devices are discussed. A brief description of processing alternatives and device physics is followed by some prototype architecture for Si MOSFET and GaAs JFET structures. Specific applications include radiation-hardened satellite memories, automobile nonvolatile dashboard memories, electronic camera memories, and smart credit cards and inventory devices. Shadow-RAMs, SRAMs, and DRAMs are described. Replacement of NMOS, core, EEPROM (electrically erasable programmable read-only memory), magnetic bubble memory, plated wire, and CMOS with battery backup seems possible within a few years

Keywords

ferroelectric devices; surface acoustic wave devices; CMOS; DRAMs; EEPROM; GaAs; GaAs JFET; NMOS; SRAMs; Si; Si MOSFET; automobile nonvolatile dashboard memories; battery backup; core; electronic camera memories; ferroelectric thin-film memory devices; inventory devices; magnetic bubble memory; plated wire; prototype architecture; radiation-hardened satellite memories; shadow-RAMS; smart credit cards; Automobiles; Ferroelectric materials; Gallium arsenide; MOSFET circuits; Nonvolatile memory; Physics; Prototypes; Satellites; Smart cameras; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1989. Proceedings., IEEE 1989

Conference_Location

Montreal, Que.

Type

conf

DOI

10.1109/ULTSYM.1989.66999

Filename

66999