DocumentCode
2732812
Title
Comparison between Si-LDMOS and GaN-based microwave power transistors
Author
Nuttinck, S. ; Gebara, E. ; Laskar, J. ; Rorsman, N. ; Olsson, J. ; Zirath, H. ; Eklund, K. ; Harris, M.
Author_Institution
Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2002
fDate
6-8 Aug. 2002
Firstpage
149
Lastpage
154
Abstract
We present in this paper a performance comparison between Si-LDMOSTs with an optimized structure for high breakdown voltage, and AlGaN/GaN power HFETs, based on DC-I/V, small-signal and RF power measurement results.
Keywords
III-V semiconductors; elemental semiconductors; gallium compounds; microwave power transistors; power MOSFET; power field effect transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; silicon; thermal stability; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN power HFET; DC-I/V power measurements; GaN-based FET; Si; Si-LDMOS microwave power transistors; high breakdown voltage optimized structures; power transistor performance comparison; reliability; small-signal RF power measurements; thermal stability; Aluminum gallium nitride; Costs; Gallium nitride; HEMTs; Integrated circuit reliability; MODFETs; Power measurement; Power transistors; Radio frequency; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN
0-7803-7478-9
Type
conf
DOI
10.1109/LECHPD.2002.1146744
Filename
1146744
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