Design of GaN/AlGaN HEMT class-E power amplifier considering trapping and thermal effects

Author

Islam, Syed S. ; Anwar, A.F.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

155

Lastpage

163

Abstract

A microwave class-E power amplifier using AlGaN/GaN HEMT as the switching device is reported by incorporating trapping and thermal effects in the large-signal device model. The load network of the class-E amplifier is designed by considering more realistic exponential decay of the drain current during fall time and finite quality factor of the resonant circuit to incorporate the nonidealities of the active device and passive components. With 9 V supply voltage, calculated output power and power conversion efficiency are 89 mW and 58% at 1GHz which decrease to 84 mW and 54% at 3.8 GHz, respectively for a GaN/Al_0.30Ga_0.70N HEMT with gate width of 50 μm.

Keywords

III-V semiconductors; Q-factor; UHF power amplifiers; aluminium compounds; circuit simulation; gallium compounds; interface states; microwave power amplifiers; power HEMT; semiconductor device models; wide band gap semiconductors; 1 GHz; 3.8 GHz; 50 micron; 54 percent; 58 percent; 84 mW; 89 mW; 9 V; GaN-AlGaN; GaN/AlGaN HEMT class-E microwave power amplifiers; HEMT gate width; HEMT switching devices; HEMT trapping/thermal effects; active device/passive component nonidealities; amplifier load networks; amplifier supply voltage/output power; fall time drain current exponential decay; large-signal device models; power conversion efficiency; resonant circuit finite Q factor; Aluminum gallium nitride; Gallium nitride; HEMTs; Microwave amplifiers; Microwave devices; Power amplifiers; Power generation; Q factor; RLC circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146745

Filename

1146745