Title :
SOI Poly-defined Diode for ESD Protection in High Speed I/Os
Author :
Chen, Victor ; Salman, Akram ; Beebe, Stephen ; Rosenbaum, Elyse ; Mitra, Souvick ; Putnam, Chris ; Gauthier, Robert
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana-Champaign, IL
Abstract :
It is crucial to minimize the parasitic capacitance at a high-frequency I/O, found in applications such as high-speed serial links and radio receivers. Here, we study the bias-dependent capacitance of a poly-defined SOI diode-a popular ESD protection device according to C. Putnam et al. (2004), C. Entringer et al. (2005), M. Khazbinisky et al. (2005), S. Mitra et al. (2005), and S. Voidman et al. (1996). Also, we present a model for this diode; the model is intended for circuit simulation
Keywords :
capacitance; circuit simulation; electrostatic discharge; semiconductor device models; semiconductor diodes; silicon-on-insulator; ESD protection; SOI poly-defined diode; bias-dependent capacitance; high speed I/O; high-frequency I/O; parasitic capacitance minimization; Capacitance measurement; Capacitors; Electrostatic discharge; Fingers; Leakage current; Parasitic capacitance; Protection; Semiconductor diodes; Space vector pulse width modulation; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251299
