Advanced large-signal modeling of GaN-HEMTs

For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a large-signal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also effects the transconductance, which is related to S₂₁ at RF conditions, the comparison of broadband S-parameter simulations and measurements revealed significant improvement when using the extended model. First experimental and theoretical investigations on the transient behavior at pulsed conditions are finally presented.