Title :
Microwave power SiC MESFETs and GaN HEMTs
Author :
Zhang, A. Ping ; Rowland, L.B. ; Kaminsky, E.B. ; Beaupre, R.A. ; Garrett, Joseph L.
Author_Institution :
Gen. Electr. Global Res. Center, Niskayuna, NY, USA
Abstract :
We have fabricated SiC MESFETs with more than 60 W of output power at 450 MHz from single 21.6 mm gate periphery devices (2.9 W/mm) and 27 W of output power at 3 GHz from single 14.4 mm SiC MESFET devices (1.9 W/mm). We have also demonstrated more than 6.7 W/mm CW power from 400 μm GaN/AlGaN HEMT devices for X band (10 GHz) applications. These excellent device performances have been attributed to the improved substrate and epitaxial film quality, optimized device thermal management, and enhanced device fabrication technologies. The substrates and epitaxial films from different sources were compared and some showed significant less SiC substrate micropipes confirmed by X-ray topography and epitaxial defects characterized by optical defect mapping.
Keywords :
III-V semiconductors; UHF field effect transistors; X-ray topography; gallium compounds; microwave power transistors; power HEMT; power MESFET; semiconductor device measurement; semiconductor device models; silicon compounds; thermal analysis; thermal management (packaging); wide band gap semiconductors; 10 GHz; 14.4 mm; 21.6 mm; 27 W; 3 GHz; 400 micron; 450 MHz; 60 W; GaN HEMT CW power; GaN-AlGaN; SiC; SiC MESFET output power; SiC substrate micropipes; X band applications; X-ray topography; device gate periphery size; epitaxial defects; microwave power transistors; optical defect mapping; substrate/epitaxial film quality; thermal management optimization; thermal simulation models; Gallium nitride; HEMTs; MESFETs; MODFETs; Microwave devices; Optical films; Power generation; Silicon carbide; Substrates; Thermal management;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146748
