III–V photonic crystal lasers heterogeneously bonded to Silicon-On-Insulator waveguides

Author

Karle, T.J. ; Halioua, Y. ; Raineri, F. ; Sagnes, I. ; Raj, R. ; Roelkens, G. ; van Laere, F. ; Van Thourhout, D.

Author_Institution

Lab. de Photonique et de Nanostruct., Marcoussis, France

fYear

2009

fDate

June 28 2009-July 2 2009

Firstpage

1

Lastpage

2

Abstract

We report on the fabrication of InP-based 2D photonic crystal lasers operating around lambda = 1.55 mum at room temperature, integrated with and evanescently coupled to Silicon-On-Insulator waveguides. Pulsed laser operation is obtained from a line defect photonic crystal waveguide accurately aligned (< 30 nm) on top the SOI circuitry. This active-passive integration is demonstrated using an adhesive bonding technique. Lasing action is demonstrated for several low group velocity modes of the photonic crystal defect waveguide.

Keywords

III-V semiconductors; adhesive bonding; indium compounds; integrated optics; laser modes; photonic crystals; semiconductor lasers; silicon-on-insulator; waveguide lasers; III-V photonic crystal lasers; InP; InP-based two-dimensional photonic crystal; SOI circuitry; Si; active-passive integration; adhesive bonding; evanescent coupling; heterogeneous bonding; lasing action; line defect photonic crystal waveguide; low group velocity modes; pulsed laser operation; room temperature operation; silicon-on-insulator waveguides; temperature 293 K to 298 K; wavelength 1.55 mum; Bonding; Coupling circuits; Optical coupling; Optical device fabrication; Optical pulses; Photonic crystals; Pulse circuits; Silicon on insulator technology; Temperature; Waveguide lasers; InP; SOI; active-passive integration; lasers; photonic crystals;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on

Conference_Location

Azores

Print_ISBN

978-1-4244-4825-8

Electronic_ISBN

978-1-4244-4827-2

Type

conf

DOI

10.1109/ICTON.2009.5185334

Filename

5185334