45nm Node Categorized via Chain Resistance and Image by Optical Beam Induced Resistance Changes (OBIRCH) Method

Author

Matsubara, Yoshihisa ; Watanabe, Tadayoshi

Author_Institution

Adv. Interconnect Design Group, Semicond. Leading Edge Technol.

fYear

2006

fDate

26-30 March 2006

Firstpage

643

Lastpage

644

Abstract

Via chain resistance categorized by OBIRCH image was investigated using samples having 140nm and 200nm pitch via chain interconnect. Via chain resistance is increased with an increasing number of defects in the case of line edge roughness failures. Line end shortening and via filling failures strongly impact via chain total resistances as identified by imaging. The concurrent failure mode between open and short failure can be revealed by the image features and the categorized resistance

Keywords

electric impedance imaging; integrated circuit interconnections; integrated circuit testing; 140 nm; 200 nm; OBIRCH; concurrent failure mode; line edge roughness failure; line end shortening; optical beam induced resistance changes; via chain interconnect; via chain resistance; via filling failure; Circuit testing; Electric resistance; Integrated circuit interconnections; Large-scale systems; Lead compounds; Lithography; Optical beams; Optical design; Optical films; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251303

Filename

4017244