Title :
Impact of untreated thicker CVD TiN film at a Via glue layer on Rc Performance in 0.15um CMOS Technology
Author :
Lee, Kyeong Sik ; Kim, Nam Sung ; Liu, Jun ; Shin, Jung Wook ; Chin, Woo Kah ; Li, Yungui ; You, Young Seon ; Tan, Jackson ; Yoon, Hyun Gu ; Han, Sang Hyun
Author_Institution :
Syst. on Silicon Manuf. Co. Pte. Ltd., Singapore
Abstract :
In this work, it is reported that the mechanism was studied on abnormal via contact resistance (Rc) and the promising solutions to improve via Rc were proposed. We found out that via Rc is very sensitive to CVDTiN plasma treatment efficiency and also a slight fluctuation of CVDTiN thickness could significantly increase the amount of untreated CVDTiN film, leading to higher via Rc. This paper focuses on the impact of untreated thicker CVDTiN film at a via glue layer and the improvement solution of via Rc
Keywords :
CMOS integrated circuits; chemical vapour deposition; contact resistance; integrated circuit metallisation; semiconductor thin films; titanium compounds; 0.15 micron; CMOS technology; CVD film thickness; CVD plasma treatment; Rc performance; TiN; via contact resistance; via glue layer; CMOS technology; Chemical vapor deposition; Plasma applications; Plasma chemistry; Plasma measurements; Plasma properties; Plasma temperature; Radio frequency; Robustness; Tin;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251304
