Impact of untreated thicker CVD TiN film at a Via glue layer on Rc Performance in 0.15um CMOS Technology

Author

Lee, Kyeong Sik ; Kim, Nam Sung ; Liu, Jun ; Shin, Jung Wook ; Chin, Woo Kah ; Li, Yungui ; You, Young Seon ; Tan, Jackson ; Yoon, Hyun Gu ; Han, Sang Hyun

Author_Institution

Syst. on Silicon Manuf. Co. Pte. Ltd., Singapore

fYear

2006

fDate

26-30 March 2006

Firstpage

645

Lastpage

646

Abstract

In this work, it is reported that the mechanism was studied on abnormal via contact resistance (Rc) and the promising solutions to improve via Rc were proposed. We found out that via Rc is very sensitive to CVDTiN plasma treatment efficiency and also a slight fluctuation of CVDTiN thickness could significantly increase the amount of untreated CVDTiN film, leading to higher via Rc. This paper focuses on the impact of untreated thicker CVDTiN film at a via glue layer and the improvement solution of via Rc

Keywords

CMOS integrated circuits; chemical vapour deposition; contact resistance; integrated circuit metallisation; semiconductor thin films; titanium compounds; 0.15 micron; CMOS technology; CVD film thickness; CVD plasma treatment; Rc performance; TiN; via contact resistance; via glue layer; CMOS technology; Chemical vapor deposition; Plasma applications; Plasma chemistry; Plasma measurements; Plasma properties; Plasma temperature; Radio frequency; Robustness; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251304

Filename

4017245