Title :
Molecular beam deposition of low-resistance polycrystalline InAs
Author :
Scott, D. ; Urteaga, M. ; Parthasarathy, N. ; English, J.H. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report low-resistance Si-doped polycrystalline InAs (poly-InAs:Si) using molecular beam deposition. We believe this to be the first report of low resistance in poly-InAs. The poly-InAs:Si was deposited using conventional molecular beam epitaxy (MBE) onto SiNx coated GaAs substrates at various growth temperatures and deposition rates. Poly-InAs samples with thicknesses of 2000 Å and 1000 Å were grown for Hall and TLM measurements, respectively. We have observed electron concentrations from 8.8×1018 to 1.5×1019 cm-3 and respective mobilities from 886 to 441 cm2/Vs. This range of values suggests that the poly-InAs:Si has a doping-mobility product, and hence bulk conductivity, that is only 3-4 times lower than that of similarly doped InGaAs lattice-matched to InP. The typical bulk resistivity determined by TLM measurements is approximately 1.4×10-3 Ω-cm. Contact resistance to the poly-InAs with a Ti/Pt/Au metal stack less than 1.6×10-7 Ω-cm2. The combined low contact access resistance and low junction capacitance found in poly-InAs:Si may be useful in a variety of III-V device applications.
Keywords :
Hall mobility; III-V semiconductors; capacitance; contact resistance; electrical resistivity; electron density; electron mobility; grain size; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; 1.4×10-3 ohmcm; 1000 A; 2000 A; GaAs; Hall measurements; III-V device applications; InAs:Si-SiN-GaAs; MBE; Si-doped polycrystalline InAs; SiNx coated GaAs substrates; TLM measurements; Ti-Pt-Au; Ti/Pt/Au metal stack; bulk conductivity; bulk resistivity; contact resistance; doping-mobility product; electron concentrations; electron mobilities; low junction capacitance; low-resistance polycrystalline InAs; molecular beam deposition; molecular beam epitaxy; poly-InAs:Si; Conductivity; Contact resistance; Electrical resistance measurement; Electron mobility; Gallium arsenide; Molecular beam epitaxial growth; Silicon compounds; Substrates; Temperature; Thickness measurement;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146752
