• DocumentCode
    2732993
  • Title

    Transient currents in HfO2 and their impact on circuit and memory applications

  • Author

    Compagnoni, C. Monzio ; Spinelli, A.S. ; Bianchini, A. ; Lacaita, A.L. ; Spiga, S. ; Fanciulli, M.

  • Author_Institution
    Dipt. di Elettronica e Informazione, Politecnico di Milano
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    651
  • Lastpage
    652
  • Abstract
    We investigate transient currents in HfO2 dielectrics, considering their dependence on electric field, temperature and gate stack composition. We show that transient currents remain an issue even at very low temperatures and irrespective of the HfO2/SiO2 bilayer properties. Finally, we assess their impact on the reliability of precision circuit and memory applications
  • Keywords
    dielectric devices; hafnium compounds; integrated circuit reliability; semiconductor storage; silicon compounds; transients; HfO2-SiO2; bilayer property; dielectric material; gate stack composition; memory application; precision circuit reliability; transient currents; Capacitors; Circuits; Current measurement; Dielectrics; Hafnium oxide; Laboratories; Leakage current; Microelectronics; Temperature dependence; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251307
  • Filename
    4017248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2732993