DocumentCode :
2732993
Title :
Transient currents in HfO2 and their impact on circuit and memory applications
Author :
Compagnoni, C. Monzio ; Spinelli, A.S. ; Bianchini, A. ; Lacaita, A.L. ; Spiga, S. ; Fanciulli, M.
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
651
Lastpage :
652
Abstract :
We investigate transient currents in HfO2 dielectrics, considering their dependence on electric field, temperature and gate stack composition. We show that transient currents remain an issue even at very low temperatures and irrespective of the HfO2/SiO2 bilayer properties. Finally, we assess their impact on the reliability of precision circuit and memory applications
Keywords :
dielectric devices; hafnium compounds; integrated circuit reliability; semiconductor storage; silicon compounds; transients; HfO2-SiO2; bilayer property; dielectric material; gate stack composition; memory application; precision circuit reliability; transient currents; Capacitors; Circuits; Current measurement; Dielectrics; Hafnium oxide; Laboratories; Leakage current; Microelectronics; Temperature dependence; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251307
Filename :
4017248
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2732993
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