Title :
Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuits
Author :
Shen, C. ; Yang, T. ; Li, M.-F. ; Samudra, G. ; Yeo, Y.C. ; Zhu, C.X. ; Rustagit, S.C. ; Yu, M.B. ; Kwong, D.L.
Author_Institution :
Dept. of ECE, Singapore Nat. Univ.
Abstract :
Fast component of Vth instability in MOSFET with HfO 2 gate dielectric is systematically measured and characterized. A charge trapping/de-trapping model is used to simulate the Vth instability with overall agreement with the experiments. Experimental and modeling data provide and predict the fast Vth shift under both static and dynamic stress conditions. These data are incorporated into HSpice circuit simulation to evaluate the impact of Vth shift on the performance of digital circuit in realistic situations. Considering the properties of the fast Vth instability, circuit performance can be optimized by circuit design in addition to process improvements. This should be included to the guideline of process development and circuit design for future CMOSFET digital systems
Keywords :
MOSFET; circuit simulation; dielectric materials; digital circuits; hafnium compounds; network synthesis; CMOSFET digital system; HSpice circuit simulation; HfO2; charge de-trapping; charge trapping; circuit design; digital circuits; gate dielectric MOSFET; stress conditions; voltage instability; voltage shift; Circuit optimization; Circuit simulation; Circuit synthesis; Design optimization; Dielectric measurements; Digital circuits; Hafnium oxide; MOSFETs; Predictive models; Stress;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251308
