Title :
Evaluation of interfaces in narrow InAs/AlSb quantum wells
Author :
Tang, J. ; Larrabee, D.C. ; Brinson, B.E. ; Khodaparast, G.A. ; Kono, J. ; Ueda, K. ; Nakajima, Yoshiki ; Suekane, O. ; Sasa, S. ; Inoue, M. ; Kolokolov, K.I. ; Li, J. ; Ning, C.Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX, USA
Abstract :
InAs/AlSb quantum wells may be grown with two types of interfaces: InSb-like and AlAs-like. The interface type refers to the half-monolayer of the well material and half monolayer of barrier which are in contact. The type and quality of the quantum well interface is critical to the ISBT intensity and lineshape and, to a lesser extent, position. In addition to FTIR spectroscopy of the ISBT, we have performed transmission electron microscopy (TEM) to directly evaluate the quality of the interfaces at the atomic level. In order to evaluate the effects of interface type and quality on ISBT intensity, lineshape, and linewidth, we studied the TEM of a 10 nm QW sample with InSb-InSb interfaces and a 3 nm QW sample with InSb-AlAs interfaces.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; interface structure; light absorption; photoluminescence; semiconductor quantum wells; spectral line breadth; spectral line intensity; transmission electron microscopy; 10 nm; 3 nm; AlAs-like interface; FTIR spectra; ISBT absorption energy; ISBT intensity; ISBT lineshape; ISBT linewidth; ISBT position; InAs-AlSb; InAs/AlSb; InSb-like interface; TEM; interface quality; intersubband transitions; narrow quantum wells; photoluminescence; short-wavelength limit; transmission electron microscopy; Absorption; Buffer layers; Electrons; Gallium arsenide; Materials science and technology; NASA; Performance evaluation; Quantum computing; Space technology; Spectroscopy;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146754
