Title :
Carrier Recombination in High-K Dielectrics and its Impact on Transient Charge Effects in High-k Devices
Author :
Kang, C.Y. ; Choi, R. ; Song, S.C. ; Young, C.D. ; Bersuker, G. ; Lee, B.H. ; Lee, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
Abstract :
In this paper, transient charge trapping and detrapping characteristics in high-k CMOSFET have been studied systematically. Detrapping characteristics for nMOSFET and pMOSFET are due to hole trapping and electron trapping, respectively. Transient charge recombination within high-k layer was found to be the main reason for the input signal dependence in high-k CMOSFET
Keywords :
MOSFET; electron traps; electron-hole recombination; high-k dielectric thin films; hole traps; carrier recombination; charge detrapping; electron trapping; high-k CMOSFET; high-k dielectrics; hole trapping; transient charge effects; transient charge recombination; transient charge trapping; Charge carrier processes; Current measurement; Dielectric measurements; Electron traps; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Microelectronics; Pulse measurements; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251310
