Title :
Improving carrier mobility and reliability characteristics of high-k NMOSFET by using stacked Y2O3/HfO2 gate dielectric
Author :
Zhu, Feng ; Kang, C.Y. ; Rhee, S.J. ; Choi, C.H. ; Krishnan, S.A. ; Zhang, M. ; Kim, H.S. ; Lee, T. ; Ok, I. ; Thareja, G. ; Lee, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
Abstract :
To overcome the issues of mobility degradation and charge trapping in the high-k MOSFET, a stacked Y2O3 (top)/HfO2 (bottom) multi-metal gate dielectric with TaN gate has been developed. Compared to the HfO2 reference, the new dielectric shows similar scalability, but superior device performance and reliability characteristics. Channel mobility, fast transient charge trapping, bias temperature instability, and stress induced leakage current have been improved for Y2O3/HfO2 device
Keywords :
MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; semiconductor device reliability; tantalum compounds; yttrium compounds; TaN; Y2O3-HfO2; bias temperature instability; carrier mobility; channel mobility; high-k MOSFET; high-k NMOSFET; mobility degradation; multimetal gate dielectric; reliability characteristics; stress induced leakage current; transient charge trapping; Degradation; Dielectric devices; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; Scalability; Stress; Temperature;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251311
