Determination of IRMS Rules for 65nm Node Design Foundations and Thermal Effect of Dummies

Author

Ney, D. ; Federspiel, X. ; Girault, V. ; Thomas, O. ; Gergaud, P.

Author_Institution

CR&D Labs., STMicroelectron., Crolles

fYear

2006

fDate

26-30 March 2006

Firstpage

669

Lastpage

670

Abstract

We propose in the present paper root mean square (RMS) current rules to limit Joule heating in the back end of line (BEOL) of 65nm node circuits. These rules are based on a new analytical thermal resistance model previously determined for 130 and 90nm node BEOL. To confirm the validity of this model through technologies, Joule heating measurements at 110degC were performed on copper lines embedded with SiOC dielectric for the 65nm node technology. Then, the thermal effect of copper dummies was studied

Keywords

copper; electromigration; heating; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; oxygen compounds; silicon compounds; thermal resistance; 110 C; 130 nm; 65 nm; 90 nm; Joule heating measurements; SiOC; analytical thermal resistance model; copper interconnects; copper lines; copper resistivity; dummies thermal effect; electromigration; node design foundations; root mean square current rules; Copper; Current measurement; Dielectric measurements; Electric resistance; Electrical resistance measurement; Integrated circuit interconnections; Resistance heating; Temperature; Thermal conductivity; Thermal resistance; Joule heating; copper interconnects; copper resistivity; design foundations; electromigration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251316

Filename

4017257