Title :
Effects of Width Scaling, Length Scaling, and Layout Variation on Electromigrationin in Dual Damascene Copper Interconnects
Author :
Lin, M.H. ; Chang, K.P. ; Su, K.C. ; Wang, Tahui
Author_Institution :
United Microelectron. Corp., Hsinchu
Abstract :
Once the Cu diffusion along the top surface is sufficiently slowed, grain structures or interface boundary should affect the reliability. Effects of width scaling were evaluated after Cu/cap process optimum. Short-line immortality was examined under extremely long time testing
Keywords :
copper; electromigration; integrated circuit interconnections; integrated circuit reliability; Cu; copper diffusion; dual damascene copper interconnects; electromigration; grain structures; interface boundary; layout variation; length scaling effects; reliability; width scaling effects; Cities and towns; Copper; Dielectrics; Electronics industry; Grain boundaries; Grain size; Industrial electronics; Metals industry; Microelectronics; Testing;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251317
