DocumentCode
2733185
Title
Effects of Width Scaling, Length Scaling, and Layout Variation on Electromigrationin in Dual Damascene Copper Interconnects
Author
Lin, M.H. ; Chang, K.P. ; Su, K.C. ; Wang, Tahui
Author_Institution
United Microelectron. Corp., Hsinchu
fYear
2006
fDate
26-30 March 2006
Firstpage
671
Lastpage
672
Abstract
Once the Cu diffusion along the top surface is sufficiently slowed, grain structures or interface boundary should affect the reliability. Effects of width scaling were evaluated after Cu/cap process optimum. Short-line immortality was examined under extremely long time testing
Keywords
copper; electromigration; integrated circuit interconnections; integrated circuit reliability; Cu; copper diffusion; dual damascene copper interconnects; electromigration; grain structures; interface boundary; layout variation; length scaling effects; reliability; width scaling effects; Cities and towns; Copper; Dielectrics; Electronics industry; Grain boundaries; Grain size; Industrial electronics; Metals industry; Microelectronics; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251317
Filename
4017258
Link To Document