Title :
Study of Cu Migration-Induced Failure of Inter-Layer Dielectric
Author :
Hwang, Sang-Soo ; Jung, Sung-Yup ; Jung, Jung-Kyu ; Joo, Young-Chang
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ.
Abstract :
In order to reduce the RC delay problem, Cu interconnects are now widely used with low-k dielectrics. However, the migration of Cu into ILD (inter layer dielectrics) has been known as a major reliability concern under BTS (bias-temperature-stress) conditions. For the optimization of reliability of devices based on Cu interconnects with low-k dielectrics, theoretical and quantitative understanding of Cu migration induced dielectric breakdown mechanism is needed
Keywords :
RC circuits; circuit optimisation; copper; dielectric materials; electric breakdown; integrated circuit interconnections; integrated circuit reliability; Cu; RC delay problem; bias-temperature-stress; copper interconnects; copper migration-induced failure; device reliability optimization; dielectric breakdown; inter-layer dielectric; low-k dielectrics; Acceleration; Delay; Dielectric breakdown; Dielectric devices; Electric breakdown; Electrodes; Failure analysis; Materials science and technology; Reliability theory; Testing;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251318
