Analysis of Electromigration Voiding Phenomena in Cu Interconnects

Author

Arnaud, L. ; Guillaumond, J.F. ; Claret, N. ; Cayron, C. ; Guedj, C. ; Dupeux, M. ; Arnal, V. ; Reimbold, G. ; Passemard, G. ; Torres, J.

Author_Institution

CEA-LETI, Grenoble

fYear

2006

fDate

26-30 March 2006

Firstpage

675

Lastpage

676

Abstract

The purpose of this paper is to show the role of the sidewall barrier on the nucleation / growth of electromigration induced voids in Cu interconnects. A comparison is made between an anisotropic PVD process and a conformal CVD process. Standard electromigration (EM) and scanning electron microscopy (SEM) give a clear picture of the failure mechanisms. SEM shows the steps of void growth in 120 nm linewidth. EBSD (electron backscattering diffraction) shows that voids are nucleated at grain boundary

Keywords

backscatter; electromigration; electron diffraction; integrated circuit interconnections; plasma CVD; scanning electron microscopy; 120 nm; Cu; SEM; anisotropic PVD process; conformal CVD process; copper interconnects; electromigration voiding phenomena; electron backscattering diffraction; failure mechanisms; grain boundary; scanning electron microscopy; sidewall barrier; Atherosclerosis; Copper; Electromigration; Equations; Grain boundaries; Metallization; Numerical analysis; Passivation; Scanning electron microscopy; Silicon compounds; Cu; electromigration; interconnects; voiding;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251319

Filename

4017260