Title :
Analysis of Electromigration Voiding Phenomena in Cu Interconnects
Author :
Arnaud, L. ; Guillaumond, J.F. ; Claret, N. ; Cayron, C. ; Guedj, C. ; Dupeux, M. ; Arnal, V. ; Reimbold, G. ; Passemard, G. ; Torres, J.
Author_Institution :
CEA-LETI, Grenoble
Abstract :
The purpose of this paper is to show the role of the sidewall barrier on the nucleation / growth of electromigration induced voids in Cu interconnects. A comparison is made between an anisotropic PVD process and a conformal CVD process. Standard electromigration (EM) and scanning electron microscopy (SEM) give a clear picture of the failure mechanisms. SEM shows the steps of void growth in 120 nm linewidth. EBSD (electron backscattering diffraction) shows that voids are nucleated at grain boundary
Keywords :
backscatter; electromigration; electron diffraction; integrated circuit interconnections; plasma CVD; scanning electron microscopy; 120 nm; Cu; SEM; anisotropic PVD process; conformal CVD process; copper interconnects; electromigration voiding phenomena; electron backscattering diffraction; failure mechanisms; grain boundary; scanning electron microscopy; sidewall barrier; Atherosclerosis; Copper; Electromigration; Equations; Grain boundaries; Metallization; Numerical analysis; Passivation; Scanning electron microscopy; Silicon compounds; Cu; electromigration; interconnects; voiding;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251319
