Title :
CVD tungsten metallization and electron beam lithography for fabricating submicron interconnects for advanced ULSI
Author :
Wilson, S.R. ; Mattox, R.J.
Author_Institution :
Motorola, Mesa, AZ, USA
Abstract :
CVD W (0.45- mu m-thick) and CVD W (0.25- mu m-thick) strapped by Al (0.5- mu m-thick) have been used as metal 1 systems. Electrical and physical data are presented from experiments exploring the effects of processing issued with both electron-beam and stepper lithography, as well as dry-etch chemistry on both metal systems. The special issues encountered with the thick tungsten processing were: (1) significant electron-beam proximity related problems as compared to the sandwich metal layers; and (2) multiple etch related problems due to mask failure and a lack of etch selectivity. A high-selectivity etch was developed that greatly reduced underlying dielectric damage and allowed the used of relatively thin organic and PEO (plasma-enhanced oxide) hardmask layers without mask failure.<>
Keywords :
CVD coatings; VLSI; electron beam lithography; integrated circuit technology; metallisation; sputter etching; tungsten; CVD; W; W-Al; advanced ULSI; dielectric damage; dry-etch chemistry; electron beam lithography; electron-beam proximity; etch selectivity; mask failure; metallization; multiple etch related problems; plasma-enhanced oxide; stepper lithography; submicron interconnects; Artificial intelligence; Electron beams; Etching; Filling; Integrated circuit interconnections; Lithography; Metallization; Plasma chemistry; Resists; Tungsten;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location :
Santa Clara, CA, USA
DOI :
10.1109/VMIC.1988.14188
