Title :
MMIC compatible AlSb/InAs HEMT with stable AlGaSb buffer layers
Author :
Tsai, R. ; Barsky, M. ; Lee, J. ; Boos, J.B. ; Bennett, B.R. ; Magno, R. ; Namba, C. ; Liu, P.H. ; Gutierrez, A. ; Lai, R.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
In this paper, we present state-of-the-art fT and fmax results of 130 GHz, and 110 GHz for AlSb/InAs HEMTs with AlGaSb/AlSb metamorphic buffer layers that demonstrate InAs-channel HEMTs that are stable with exposure to air and are compatible with standard MMIC production processes.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; equivalent circuits; field effect MIMIC; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; molecular beam epitaxial growth; semiconductor device models; stability; 110 GHz; 130 GHz; AlGaSb-AlSb; AlSb-InAs; AlSb/InAs HEMT; EHF; InAs channel HEMTs; MBE; MIMIC compatible HEMT; MM-wave HEMT; metamorphic buffer layers; stable AlGaSb buffer layers; standard MMIC production processes; Buffer layers; Electron mobility; Etching; Gallium arsenide; HEMTs; Implants; MMICs; Molecular beam epitaxial growth; Production; Substrates;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146764
