Title :
Bonding/barrier layers on bismuth telluride (Bi2Te3) for high temperature applications
Author :
Lin, Wen P. ; Wang, Pin J. ; Lee, Chin C.
Author_Institution :
Electr. Eng. & Comput. Sci., Univ. of California, Irvine, CA, USA
Abstract :
In this research, a fundamental study is conducted to identify the materials and processes for producing bonding/barrier composites on Bi2Te3 for high temperature thermoelectric applications. Pd, Ni, Ni/Au, Ag, and Ti/Au were deposited and evaluated using scanning electron microscope (SEM) and energy dispersive X-ray (EDX). A thermal evaporated, 100nm Ti/100nm Au composite gave the most promising.
Keywords :
bismuth compounds; high-temperature electronics; scanning electron microscopy; thermoelectricity; Bi2Te3; barrier layer; bismuth telluride; bonding layer; bonding/barrier composites; energy dispersive X-ray; high temperature thermoelectric applications; scanning electron microscope; size 100 nm; Bismuth; Bonding; Composite materials; Conducting materials; Dispersion; Gold; Scanning electron microscopy; Tellurium; Temperature; Thermoelectricity; Ag-In; Bismuth telluride; Peltier effect; TLP; barrier structure; fluxless bonding; transient liquid phase bonding;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4244-6410-4
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2010.5490934
