Title :
Intersubband transitions in narrow InAs/AlSb quantum wells
Author :
Larrabee, D.C. ; Tang, J. ; Liang, M. ; Khodaparast, G.A. ; Kono, J. ; Ueda, K. ; Nakajima, Y. ; Suekane, O. ; Sasa, S. ; Inoue, M. ; Kolokolov, K.I. ; Li, J. ; Ning, C.Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX, USA
Abstract :
We have investigated intersubband transitions (ISBTs) in InAs/AlSb multiple quantum wells. In wells from 7 to 10 nm wide, the ISBT energy increases with decreasing well width and temperature. We do not observe photoluminescence (PL) from these wells. In wells from 2.4 to 6 nm wide, we observe PL but not ISBTs. We have calculated the band structure of these samples using an 8 band k.p theory including strain and many-body effects. We have modelled the dependence of the ISBT energy on well width and temperature. In addition, we have observed the effects on ISBTs of QW interface type and Si doping in the well.
Keywords :
III-V semiconductors; aluminium compounds; band structure; doping profiles; indium compounds; many-body problems; photoluminescence; semiconductor quantum wells; 2.4 to 6 nm; 7 to 10 nm; ISBT energy; InAs-AlSb; InAs/AlSb narrow multiple quantum wells; MQW; PL; QW interface type; band structure; intersubband absorptions; many-body effects; multi-band kp theory; photoluminescence; quantum well intersubband transitions; strain effects; well Si doping; well width/size/temperature; Absorption; Capacitive sensors; Frequency conversion; Lattices; Photoluminescence; Quantum cascade lasers; Quantum computing; Quantum well devices; Space technology; Temperature dependence;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146771
