DocumentCode
2733401
Title
Reliability of MgO Tunneling Barrier for MRAM Device
Author
Yoshida, Chikako ; Noshiro, Hideyuki ; Yamazaki, Yuichi ; Iizuka, Takashi ; Stoh, Yoshihiro ; Aoki, Masaki ; Umehara, Shinnjiro ; Satoh, Masashige ; Kobayashi, Kazuo
Author_Institution
Device & Mater. Labs., Fujitsu Labs. Ltd., Atsugi
fYear
2006
fDate
26-30 March 2006
Firstpage
697
Lastpage
698
Abstract
We investigated the reliability of MgO and AlOx tunneling barrier, for MRAM device. It is found that MgO tunneling barrier has the hydrogen tolerance compared with AlOx tunneling barrier. It also demonstrated that MgO-barrier MTJ has longer lifetime, over 10 years, than AlOx-barrier MTJ by TDDB data
Keywords
aluminium compounds; electric breakdown; hydrogen; magnesium compounds; magnetic storage; magnetic tunnelling; random-access storage; AlO; H; MRAM device; MgO; magnetic tunnel junction; time dependent dielectric breakdown data; tunneling barrier reliability; Annealing; Hydrogen; Laboratories; Magnetic films; Magnetic tunneling; Materials reliability; Sputtering; Stress; Voltage; Weibull distribution; AlOx barrier; MRAM; MTJ; MgO barrier; TDDB; hydrogen anneal;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251330
Filename
4017271
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