DocumentCode :
2733401
Title :
Reliability of MgO Tunneling Barrier for MRAM Device
Author :
Yoshida, Chikako ; Noshiro, Hideyuki ; Yamazaki, Yuichi ; Iizuka, Takashi ; Stoh, Yoshihiro ; Aoki, Masaki ; Umehara, Shinnjiro ; Satoh, Masashige ; Kobayashi, Kazuo
Author_Institution :
Device & Mater. Labs., Fujitsu Labs. Ltd., Atsugi
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
697
Lastpage :
698
Abstract :
We investigated the reliability of MgO and AlOx tunneling barrier, for MRAM device. It is found that MgO tunneling barrier has the hydrogen tolerance compared with AlOx tunneling barrier. It also demonstrated that MgO-barrier MTJ has longer lifetime, over 10 years, than AlOx-barrier MTJ by TDDB data
Keywords :
aluminium compounds; electric breakdown; hydrogen; magnesium compounds; magnetic storage; magnetic tunnelling; random-access storage; AlO; H; MRAM device; MgO; magnetic tunnel junction; time dependent dielectric breakdown data; tunneling barrier reliability; Annealing; Hydrogen; Laboratories; Magnetic films; Magnetic tunneling; Materials reliability; Sputtering; Stress; Voltage; Weibull distribution; AlOx barrier; MRAM; MTJ; MgO barrier; TDDB; hydrogen anneal;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251330
Filename :
4017271
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2733401
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