• DocumentCode
    2733412
  • Title

    Temperature Dependence of Endurance Characteristics in NOR Flash Memory Cells

  • Author

    Lee, Wook H. ; Park, Chan-Kwang ; Kim, Kinam

  • Author_Institution
    Technol. Dev. Team, Samsung Electron., Yong-In
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    701
  • Lastpage
    702
  • Abstract
    A temperature dependence of endurance characteristics in NOR flash cells is presented. The window closing is accelerated after 100 K cycling due to a degraded programming speed at 85 degC compared to that measured at 25 degC. At 25 degC, both oxide traps and interface traps reduce program and erase speeds, while at 85 degC the effects of interface traps generated at the drain overlap region become increased, interrupting the hot electron injection during program operation. Two processing conditions including growth condition of tunnel oxide and the type of passivation layer are found to be related to the degradation of endurance
  • Keywords
    NOR circuits; flash memories; hot carriers; integrated circuit reliability; interface states; passivation; 25 C; 85 C; NOR flash memory cells; endurance characteristics; erase speed; hot electron injection; interface traps reduce; oxide traps; passivation layer; program speed; temperature dependence; tunnel oxide; window closing; Acceleration; Degradation; Electron traps; Flash memory cells; Interface states; Isolation technology; Passivation; Secondary generated hot electron injection; Temperature dependence; Velocity measurement; Endurance; Interface Trap; NOR flash; Si-H;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251332
  • Filename
    4017273