DocumentCode
2733412
Title
Temperature Dependence of Endurance Characteristics in NOR Flash Memory Cells
Author
Lee, Wook H. ; Park, Chan-Kwang ; Kim, Kinam
Author_Institution
Technol. Dev. Team, Samsung Electron., Yong-In
fYear
2006
fDate
26-30 March 2006
Firstpage
701
Lastpage
702
Abstract
A temperature dependence of endurance characteristics in NOR flash cells is presented. The window closing is accelerated after 100 K cycling due to a degraded programming speed at 85 degC compared to that measured at 25 degC. At 25 degC, both oxide traps and interface traps reduce program and erase speeds, while at 85 degC the effects of interface traps generated at the drain overlap region become increased, interrupting the hot electron injection during program operation. Two processing conditions including growth condition of tunnel oxide and the type of passivation layer are found to be related to the degradation of endurance
Keywords
NOR circuits; flash memories; hot carriers; integrated circuit reliability; interface states; passivation; 25 C; 85 C; NOR flash memory cells; endurance characteristics; erase speed; hot electron injection; interface traps reduce; oxide traps; passivation layer; program speed; temperature dependence; tunnel oxide; window closing; Acceleration; Degradation; Electron traps; Flash memory cells; Interface states; Isolation technology; Passivation; Secondary generated hot electron injection; Temperature dependence; Velocity measurement; Endurance; Interface Trap; NOR flash; Si-H;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251332
Filename
4017273
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