DocumentCode
2733415
Title
40 GHz MMIC power amplifier in InP DHBT technology
Author
Wei, Yun ; Sundararajan, Krishnan ; Urteaga, Miguel ; Griffith, Zach ; Scott, Dennis ; Paidi, Vamsi ; Parthasarathy, Navin ; Rodwell, Mark
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
2002
fDate
6-8 Aug. 2002
Firstpage
352
Lastpage
357
Abstract
We report a 40 GHz MMIC power amplifier in InP DHBT technology that exhibits 14 dBm output power at 1 dB gain compression and 17 dBm saturated output power with 4 dB associated gain. The small-signal power gain is 6.8 dB, the input return loss is less than -20 dB and the output return loss is less than -6 dB. The peak power added efficiency is 12.5%.
Keywords
III-V semiconductors; MMIC power amplifiers; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit measurement; 12.5 percent; 20 dB; 4 dB; 40 GHz; 6 dB; 6.8 dB; InP; InP DHBT technology; Ka band power amplifiers; MMIC power amplifiers; amplifier gain compression; input return loss; output return loss; peak power added efficiency; saturated output power; small-signal power gain; Circuit topology; DH-HEMTs; Fingers; Gain; Heterojunction bipolar transistors; Indium phosphide; MMICs; Power amplifiers; Power generation; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN
0-7803-7478-9
Type
conf
DOI
10.1109/LECHPD.2002.1146774
Filename
1146774
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