Title :
Anovel High Reliability ILD Stack
Author :
Naughton, John J. ; Nelson, Mark M.
Author_Institution :
AMI Semicond., Pocatello, ID
Abstract :
A CMP micro-scratch resistant pre-metal dielectric was developed. A 200 nm phosphorous-doped SACVD film provides adequate step coverage for 0.35-mum single poly silicon device structures. It was necessary to leave the SACVD PSG film exposed during the densification step to better match the existing process film characteristics specifically film stress and total oxide charge. This sequence proved to minimize any change in device performance. In line defectivity showed an order of magnitude improvement and early life failure testing showed a 2ppm reduction
Keywords :
CVD coatings; chemical mechanical polishing; densification; dielectric materials; failure analysis; phosphorus; reliability; silicon; 0.35 micron; 200 nm; CMP; ILD stack; P; SACVD PSG film; SACVD film; Si; densification; early life failure testing; film stress; interlevel dielectric; microscratch resistant premetal dielectric; polysilicon device; total oxide charge; Boron; Dielectrics; Planarization; Plasma chemistry; Plasma density; Plasma devices; Semiconductor films; Silicon; Tensile stress; Testing;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251339
