Title :
RF and DC characteristics of low-leakage InAs/AlSb HFETs
Author :
Brar, B. ; Nagy, G. ; Bergman, J. ; Sullivan, G. ; Rowell, P. ; Lin, H.-K. ; Dahlstrom, M. ; Kadow, C. ; Rodwell, M.
Author_Institution :
Rockwell Sci. Co., Thousand Oaks, CA, USA
Abstract :
InAs/AlSb HFETs with excellent RF and DC properties are reported. The drain currents are 750 mA/mm. with peak transconductance gm of 1.1 S/mm. The gate leakage is below 1 nA/μm2 for low gate bias. The threshold voltages of 0.25 μm and 0.5 μm gate-length devices are -2.5 and -1.5 V respectively, indicating short channel effects are present. Small-signal measurements on a 0.25 μm gate-length device show fτ of 120 GHz and fmax of 100 GHz at drain voltages below 0.4 V.
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; characteristics measurement; indium compounds; leakage currents; microwave field effect transistors; semiconductor device measurement; -1.5 V; -2.5 V; 0.25 micron; 0.5 micron; 100 GHz; 120 GHz; DC characteristics; HFETs; InAs-AlSb; InAs/AlSb; RF properties; drain currents; gate bias; gate leakage; low-leakage devices; peak transconductance; short channel effects; small-signal measurements; threshold voltages; Electrical resistance measurement; Electron mobility; Epitaxial layers; Gallium arsenide; Gate leakage; HEMTs; MODFETs; Radio frequency; Tellurium; Voltage;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146781
