Title :
High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs
Author :
Parikh, P. ; Wu, Y. ; Moore, M. ; Chavarkar, P. ; Mishra, U. ; Neidhard, R. ; Kehias, L. ; Jenkins, T.
Author_Institution :
Cree Lighting Co., USA
Abstract :
AlGaN-GaN HEMTs have not only been identified as the technology of choice for next generation high-power, high frequency applications but recently have also garnered interest for low noise receiver applications. In this paper, we discuss the noise figure and linearity of robust GaN HEMTs for LNA integrated circuits. GaN HEMTs with a low noise figure of 0.75 dB at X-band are presented. We believe this is the first comprehensive report combining all major requirements of a robust LNA-receiver technology: low noise figure, high linearity and high survivability.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; integrated circuit noise; integrated circuit reliability; microwave receivers; wide band gap semiconductors; 0.75 dB; AlGaN-GaN; AlGaN-GaN HEMTs; LNA integrated circuits; X-band noise figure; epistructure growth; high linearity HEMTs; high survivability; linearity characterization; low noise receiver applications; noise characterization; robust LNA-receiver technology; survivability characterization; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; Integrated circuit noise; Integrated circuit technology; Linearity; MODFETs; Noise figure; Noise robustness;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146782
