Title :
Investigation of Hot carrier Degradation in Grooved Channel Structure nMOSFETs: Sphere shaped Recess Cell Array Transistor (SRCAT)
Author :
Seo, J.Y. ; Lee, K.J. ; Kim, H. ; Lee, S.Y. ; Lee, S.S. ; Lee, W.S. ; Kim, Y.J. ; Hwang, S.J. ; Yoon, C.K.
Author_Institution :
Memory Div., Samsung Electron., Gyeonggi-Do
Abstract :
In this paper, first, it has been discussed hot carrier reliability in both Pch, RCAT and SRCAT. Second, we showed the origin of electric field suppression where the supply-voltage is applied at the same bias condition. Furthermore, we discuss the effects of ion implant process
Keywords :
MOSFET; electric fields; hot carriers; ion implantation; semiconductor device reliability; transistors; Pch; SRCAT; electric field suppression; hot carrier degradation investigation; hot carrier reliability; ion implant process; nMOSFET; sphere shaped recess cell array transistor; supply-voltage; DRAM chips; Degradation; Doping; Electric variables; Hot carriers; Impact ionization; Implants; MOSFET circuits; Random access memory; Transistors;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251343
