DocumentCode :
2733604
Title :
Dynamic Negative Bias Temperature Instability and Comprehensive Modeling in PMOS Body-Tied FinFETs
Author :
Lee, Hyunjin ; Lee, Choong-Ho ; Park, Donggun ; Choi, Yang-Kyu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
725
Lastpage :
726
Abstract :
This paper presents a novel approach to estimate the rising and falling behavior of Nth-order on-state current by dynamic negative bias temperature instability (DNBTI). For the first time, a modified DNBTI model in PMOS body-tied FinFETs was proposed and compared with experimental data. The approach can provide a quick estimation of periodic DNBTI behavior by stress and recovery. The DNBTI behaviors dependent upon stress bias, fin width, body temperature, and substrate bias were analyzed. The proposed model closely matched with the measured static-lifetime
Keywords :
MOSFET; semiconductor device models; stability; Nth-order on-state current; PMOS body-tied FinFET; body temperature; comprehensive modeling; dynamic negative bias temperature instability; fin width; static-lifetime; stress bias; substrate bias; Degradation; FinFETs; Guidelines; Negative bias temperature instability; Niobium compounds; Scalability; Stress measurement; Substrates; Titanium compounds; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251344
Filename :
4017285
Link To Document :
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