DocumentCode :
2733655
Title :
Interface-Trap Driven NBTI for Ultrathin (EOT~12Ã\x85) Plasma and Thermal Nitrided Oxynitrides
Author :
Gupta, G. ; Mahapatra, S. ; Madhav, L. Leela ; Varghese, D. ; Ahmed, K. ; Nouri, F.
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
731
Lastpage :
732
Abstract :
Negative bias temperature instability (NBTI) is studied in ultrathin Si oxynitride (SiON) films made by thermal (TNO) and plasma (PNO) processes. Threshold voltage degradation (DeltaVT) and recovery during and after NBTI stress are explained by generation and recovery of interface traps (DeltaNIT)
Keywords :
MOSFET; interface states; semiconductor device reliability; semiconductor thin films; silicon compounds; stability; stress analysis; 12 angstrom; SiON; negative bias temperature instability; plasma nitrided oxynitrides; thermal nitrided oxynitrides; threshold voltage degradation; ultrathin films; Hydrogen; Niobium compounds; Passivation; Plasma materials processing; Stress control; Stress measurement; Thermal engineering; Time measurement; Titanium compounds; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251347
Filename :
4017288
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2733655
بازگشت