Title :
Physical Modeling of Negative Bias Temperature Instabilities for Predictive Extrapolation
Author :
Huard, Vincent ; Parthasarath, C.R. ; Guerin, Cyrielle ; Denais, M.
Author_Institution :
Philips Semicond., Crolles
Abstract :
Based on new insights on measurement methodologies, interface traps creation and hole trapping as root causes of NBTI degradation are investigated in this paper. Physical modeling is proposed and the related extrapolation laws are discussed
Keywords :
MOSFET; extrapolation; hole traps; interface states; semiconductor device models; stability; hole trapping; interface traps creation; measurement methodologies; negative bias temperature instabilities; physical modeling; predictive extrapolation; single hole emission; Degradation; Delay; Extrapolation; MOSFETs; Monitoring; Negative bias temperature instability; Niobium compounds; Predictive models; Titanium compounds; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251348
