A highly compact SiGe HBT differential LNA for 3.1–10.6 GHz ultra-wideband applications

Author

Lin, Dayang ; Schleicher, Bernd ; Trasser, Andreas ; Schumacher, Hermann

Author_Institution

Inst. of Electron Devices & Circuits, Univ. of Ulm, Ulm, Germany

Volume

1

fYear

2010

fDate

20-23 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

A fully differential low noise amplifier (LNA) using SiGe HBT technology for ultra-wide band applications is presented. Measured results show the maximum power gain of 19.9 dB with a variation of 1.8dB within the entire band, the noise figure is between 2.1dB and 2.9dB in the FCC-allocated UWB band from 3.1-10.6 GHz. The input 1-dB compression point is -17.5 dBm measured at 7GHz. All measured results show excellent agreement with the simulated ones. The total current consumption is 22 mA from a 3.5 V supply. The inductor-less design occupies a chip size of only 0.14 mm² including bond pads.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; low noise amplifiers; semiconductor heterojunctions; ultra wideband communication; HBT; bandwidth 3.1 GHz to 10.6 GHz; current 22 mA; differential LNA; frequency 7 GHz; gain 19.9 dB; low noise amplifier; noise figure 2.1 dB to 2.9 dB; ultra wideband; voltage 3.5 V; Bandwidth; Delay; Frequency measurement; Gain; Gain measurement; Impedance matching; Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband (ICUWB), 2010 IEEE International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-5305-4

Electronic_ISBN

978-1-4244-5306-1

Type

conf

DOI

10.1109/ICUWB.2010.5614154

Filename

5614154