Paradigm Shift for NBTI Characterization in Ultra-Scaled CMOS Technologies

Author

Denais, M. ; Bravaix, A. ; Huard, V. ; Parthasarathy, C. ; Guerin, C. ; Ribes, G. ; Perrier, F. ; Mairy, M. ; Roy, D.

Author_Institution

STMicroelectron., Crolles

fYear

2006

fDate

26-30 March 2006

Firstpage

735

Lastpage

736

Abstract

We have proposed a new methodology to study both DC and AC NBTI effects taking into account both the recoverable property of the degradation and the electrical parameter legitimacy in each electrical configuration. In this new framework, characterization phases induce no effect (neither recovery nor extra-damage) on the degradation. For DC NBTI with a partial/uniform recovery, a generalized universal recovery modelling has been proposed for the first time to estimate the recovery amount. This modelling is particularly useful to calculate the recovery time needed after a stress period to reach a (decrease) degradation amount. For AC NBTI case, NBTI has been directly studied on circuits parameters opening new promising perspectives in term of reliability criteria

Keywords

CMOS integrated circuits; integrated circuit reliability; integrated circuit testing; interface states; stability; AC NBTI effects; DC NBTI effects; electrical parameter legitimacy; paradigm shift; partial/uniform recovery; recoverable property; ultrascaled CMOS technologies; universal recovery modelling; CMOS technology; Circuits; Degradation; Dielectrics; Niobium compounds; Stress; Technology management; Time measurement; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251349

Filename

4017290