Title :
Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors
Author :
Luo, B. ; Mehandru, R. ; Kim, J. ; Ren, F. ; Gila, B.P. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. ; Irokawa, Y.
Author_Institution :
Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Three different passivation layers (SiNx, MgO and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced chemical vapor deposited SiNx produced ∼80-85% recovery of the drain-source current, independent of whether SiH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-95% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; magnesium compounds; passivation; plasma CVD coatings; scandium compounds; silicon compounds; stability; wide band gap semiconductors; 5 month; AlGaN-GaN; AlGaN/GaN HEMTs; GaN-cap HEMT structures; MgO; NH3; PECVD coatings; Sc2O3; SiD4-ND3 plasma chemistry; SiH4; SiH4-NH3; SiN; drain-source current; long-term stability; plasma-enhanced CVD SiNx; stable passivation characteristics; surface passivation layers; surface-state-induced current collapse; Aluminum gallium nitride; Chemicals; Gallium nitride; HEMTs; MODFETs; Neodymium; Passivation; Plasma chemistry; Silicon compounds; Stability;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146790
