Title :
Impact ionization in high performance AlGaN/GaN HEMTs
Author :
Brar, B. ; Boutros, K. ; DeWarnes, R.E. ; Tilak, V. ; Shealy, R. ; Eastman, L.
Author_Institution :
Rockwell Sci. Co., Thousand Oaks, CA, USA
Abstract :
We report compelling evidence of impact ionization in high-performance AlGaN/GaN HEMTs. Relevant to the present paper, these devices also show excellent low-leakage DC properties that contain signatures of impact ionization in the output and sub-threshold characteristics. Temperature and bias dependent data are presented to support the identification of impact ionization in the devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; hot carriers; impact ionisation; leakage currents; power HEMT; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMTs; GaN channel; bias dependent data; hot electrons; impact ionization; low-leakage DC properties; output characteristics; sub-threshold characteristics; temperature dependent data; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; HEMTs; High power amplifiers; Impact ionization; MODFETs; Photonic band gap; Semiconductor materials; Voltage;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146791
