Title :
A New NBTI Lifetime Model (Ig-model) and an Investigation on Oxide Thickness Effect on NBTI Degradation and Recovery
Author :
Chen, Chia Lin ; Chen, M.J. ; Wang, C.J. ; Wu, Kenneth
Author_Institution :
Reliability Assurance Div., Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
A new Ig-model is proposed to quickly and precisely predict NBTI lifetime for ultra thin oxide (<=3.0nm). The oxide thickness effect on NBTI degradation, recovery and lifetime prediction model are systematically investigated. The mechanism of the NBTI degradation and recovery dependence on oxide thickness is explained as the two-side hydrogen reaction-diffusion mechanism
Keywords :
MOSFET; hydrogen; semiconductor device models; semiconductor device reliability; semiconductor device testing; stability; H; NBTI degradation; NBTI lifetime model; NBTI recovery; oxide thickness effect; reaction-diffusion mechanism; ultra thin oxide; Degradation; Extrapolation; Hydrogen; Leakage current; Niobium compounds; Predictive models; Stress; Titanium compounds; Tunneling; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251352
