DocumentCode
2733733
Title
A New NBTI Lifetime Model (Ig-model) and an Investigation on Oxide Thickness Effect on NBTI Degradation and Recovery
Author
Chen, Chia Lin ; Chen, M.J. ; Wang, C.J. ; Wu, Kenneth
Author_Institution
Reliability Assurance Div., Taiwan Semicond. Manuf. Co., Hsinchu
fYear
2006
fDate
26-30 March 2006
Firstpage
741
Lastpage
742
Abstract
A new Ig-model is proposed to quickly and precisely predict NBTI lifetime for ultra thin oxide (<=3.0nm). The oxide thickness effect on NBTI degradation, recovery and lifetime prediction model are systematically investigated. The mechanism of the NBTI degradation and recovery dependence on oxide thickness is explained as the two-side hydrogen reaction-diffusion mechanism
Keywords
MOSFET; hydrogen; semiconductor device models; semiconductor device reliability; semiconductor device testing; stability; H; NBTI degradation; NBTI lifetime model; NBTI recovery; oxide thickness effect; reaction-diffusion mechanism; ultra thin oxide; Degradation; Extrapolation; Hydrogen; Leakage current; Niobium compounds; Predictive models; Stress; Titanium compounds; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251352
Filename
4017293
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