Title :
AlGaN/GaN-HEMTs for power applications up to 40 GHz
Author :
Kiefer, R. ; Quay, R. ; Müller, S. ; Köhler, K. ; van Raay, F. ; Raynor, B. ; Pletschen, W. ; Massler, H. ; Ramberger, S. ; Mikulla, M. ; Weimann, G.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphysik, Freiburg, Germany
Abstract :
A 0.15 μm T-gate AlGaN/GaN-HEMT 2-inch technology has been developed. Transistors with 120 μm gatewidth show a peak transconductance of 300 mS/mm and cut-off frequencies ft and fmax of 65 GHz and 149 GHz, respectively. Large periphery 720 μm gatewidth devices are capable of CW operation up to 40 GHz yielding an output power of 0.91 W and a linear gain of 6 dB at 35 GHz. To the authors´ knowledge these results represent the highest absolute power level so far achieved with a GaN-HEMT in the Ka-band.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor technology; wide band gap semiconductors; 0.15 micron; 0.91 W; 120 micron; 149 GHz; 2 in; 300 mS/mm; 40 GHz; 6 dB; 65 GHz; 720 micron; AlGaN-GaN; AlGaN/GaN HEMTs; CW operation; EHF; HEMT two inch technology; Ka-band operation; MM-wave HEMT; T-gate HEMT; power applications; transconductance; Aluminum gallium nitride; Electrons; Gallium nitride; HEMTs; MODFETs; Power generation; Radio frequency; Silicon carbide; Substrates; Transconductance;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146793
