DocumentCode
2733974
Title
Crosstalk Cancellation of DDR3 Memory Channel for over 1600 Mbps Data Rate
Author
Lee, Junwoo ; Han, Sungwoo ; Ryu, Hyo Seog ; Kim, Sang Yeop ; Kang, Jongho ; Park, Kunwoo ; Kih, Joongsik
Author_Institution
Adv. Design Team 1, Hynix Semicond., Icheon
fYear
2009
fDate
12-16 Jan. 2009
Firstpage
337
Lastpage
340
Abstract
In this paper, we propose crosstalk cancellation methodology for high speed DDR3 memory channel whose data rate is 1600 Mbps or faster. In DDR3, DQ signal still adopts microstrip line in the motherboard in order to achieve low cost. The propagation velocity of even-mode is different from that of odd-mode in the microstrip line, which results in skew among DQs and between DQ and data strobe (DQS) as well. This crosstalk reduces timing margin a lot and it is not endurable at the high data rate. The proposed method successfully suppresses the crosstalk and it is cost effective compared with using stripline for DQ and DQS in the motherboard.
Keywords
DRAM chips; crosstalk; microstrip lines; DDR3 memory channel; DRAM chip; bit rate 1600 Mbit/s; crosstalk cancellation methodology; microstrip line; propagation velocity; Costs; Crosstalk; Dielectric constant; Microstrip; Optical propagation; Power transmission lines; Random access memory; Stripline; Timing; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility, 2009 20th International Zurich Symposium on
Conference_Location
Zurich
Print_ISBN
978-3-9523286-4-4
Type
conf
DOI
10.1109/EMCZUR.2009.4783459
Filename
4783459
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