Title :
Towards high efficiency on full wafer a-Si:H/c-Si heterojunction solar cells: 19.6% on 148cm2
Author :
Muñoz, D. ; Ozanne, A.S. ; Harrison, S. ; Danel, A. ; Souche, F. ; Denis, C. ; Favier, A. ; Desrues, T. ; De Nicolás, S. Martin ; Nguyen, N. ; Hickel, P.E. ; Mur, P. ; Salvetat, T. ; Moriceau, H. ; Le-Tiec, Y. ; Kang, M.S. ; Kim, K.M. ; Janin, R. ; Pesent
Author_Institution :
CEA-INES, Le Bourget du Lac, France
Abstract :
In this work, we present our recent technological improvements realized on 148.5cm2 amorphous/crystalline double heterojunction solar cells. In particular, we have transferred our old solar cells fabrication process to an integrated JUSUNG large area cluster (PECVD/ MOCVD/ PVD). An optimization of all the fabrication steps separately, as well as a careful preparation of the silicon wafer´s surface has allowed us to obtain efficiencies up to 19.6 % on large area solar cells (148.5cm2). The homogeneity and reproducibility of the process developed has been demonstrated on several successive batches with all efficiencies measured over 19.2%. All the fabrication process is performed at temperatures <;200°C.
Keywords :
amorphous semiconductors; elemental semiconductors; optimisation; semiconductor heterojunctions; silicon; solar cells; JUSUNG; Si:H-Si; fabrication process; heterojunction solar cells; optimization; silicon wafer; Conductivity; Indium tin oxide; Optimization; Passivation; Photovoltaic cells; Pollution measurement;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5614179