Title :
Inverted thin film InGaP/GaAs tandem solar cells for CPV applications using epitaxial lift off
Author :
Bauhuis, G.J. ; Mulder, P. ; Haverkamp, E.J. ; Schermer, J.J. ; Nash, L.J. ; Fulgoni, D.J.F. ; Ballard, I.M. ; Duggan, G.
Author_Institution :
Inst. for Mol. & Mater., Radboud Univ. Nijmegen, Nijmegen, Netherlands
Abstract :
The epitaxial lift-off technique has been applied to dual-junction III-V solar cells grown in inverted order (subcell with highest band gap is grown first). It is shown that growing in inverse order is not trivial since both the tunnel junction and the InGaP subcell perform differently.
Keywords :
III-V semiconductors; epitaxial growth; gallium arsenide; indium compounds; semiconductor thin films; solar cells; InGaP-GaAs; epitaxial lift off; inverted thin film; tandem solar cells; tunnel junction; Epitaxial growth; Gallium arsenide; Junctions; Photovoltaic cells; Silicon; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5614180
