DocumentCode
2734088
Title
Inverted thin film InGaP/GaAs tandem solar cells for CPV applications using epitaxial lift off
Author
Bauhuis, G.J. ; Mulder, P. ; Haverkamp, E.J. ; Schermer, J.J. ; Nash, L.J. ; Fulgoni, D.J.F. ; Ballard, I.M. ; Duggan, G.
Author_Institution
Inst. for Mol. & Mater., Radboud Univ. Nijmegen, Nijmegen, Netherlands
fYear
2010
fDate
20-25 June 2010
Abstract
The epitaxial lift-off technique has been applied to dual-junction III-V solar cells grown in inverted order (subcell with highest band gap is grown first). It is shown that growing in inverse order is not trivial since both the tunnel junction and the InGaP subcell perform differently.
Keywords
III-V semiconductors; epitaxial growth; gallium arsenide; indium compounds; semiconductor thin films; solar cells; InGaP-GaAs; epitaxial lift off; inverted thin film; tandem solar cells; tunnel junction; Epitaxial growth; Gallium arsenide; Junctions; Photovoltaic cells; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5614180
Filename
5614180
Link To Document