DocumentCode
2734127
Title
A fully integrated 60 GHz LNA in SiGe:C BiCMOS technology
Author
Sun, Y. ; Borngräber, J. ; Herzel, F. ; Winkler, W.
Author_Institution
IHP, Frankfurt, Germany
fYear
2005
fDate
9-11 Oct. 2005
Firstpage
14
Lastpage
17
Abstract
This paper presents a SiGe differential low-noise amplifier (LNA) for the V-band. The measured gain at 60 GHz is 18 dB, and the input return loss is below -15 dB. The 3-dB bandwidth is from 49 GHz to 71 GHz. Measured and simulated S-parameters agree well over the whole range. The LNA draws 30 mA from a 2.2 V supply. It facilitates the design of a fully integrated WLAN receiver in the 57-64 GHz band.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; S-parameters; carbon; differential amplifiers; low noise amplifiers; 18 dB; 2.2 V; 30 mA; 49 to 71 GHz; 57 to 64 GHz; BiCMOS technology; S-parameters; SiGe:C; V-band; differential amplifier; integrated WLAN receiver; low noise amplifier; microwave monolithic integrated circuits; BiCMOS integrated circuits; Bonding; CMOS technology; Coplanar waveguides; Germanium silicon alloys; Inductors; Noise figure; Q factor; Silicon germanium; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN
0-7803-9309-0
Type
conf
DOI
10.1109/BIPOL.2005.1555191
Filename
1555191
Link To Document