Title :
Back-contacted and small form factor GaAs solar cell
Author :
Cruz-Campa, J.L. ; Nielson, G.N. ; Okandan, M. ; Wanlass, M.W. ; Sanchez, C.A. ; Resnick, P.J. ; Clews, P.J. ; Pluym, T. ; Gupta, V.P.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We present a newly developed microsystem enabled, back-contacted, shade-free GaAs solar cell. Using microsystem tools, we created sturdy 3 μm thick devices with lateral dimensions of 250 μm, 500 μm, 1 mm, and 2 mm. The fabrication procedure and the results of characterization tests are discussed below. The highest efficiency cell had a lateral size of 500 μm and a conversion efficiency of 10%, open circuit voltage of 0.9 V and a current density of 14.9 mA/cm2 under one-sun illumination.
Keywords :
III-V semiconductors; current density; gallium arsenide; micromechanical devices; solar cells; GaAs; GaAs solar cell; back-contacted; current density; efficiency 10 percent; microsystem tools; one-sun illumination; open circuit; size 3 mum; size 500 mum; small form factor; voltage 0.9 V; Gallium arsenide; Photovoltaic cells; Silicon; Silver; Wire;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5614184
