Title :
Usage of HBTs beyond BVCEO
Author :
Kraft, J. ; Kraft, D. ; Loffler, B. ; Jauk, H. ; Wachmann, E.
Author_Institution :
Austriamicrosystems AG, Unterpremstatten, Germany
Abstract :
Heterojunction bipolar transistors (HBTs) are preferred devices for designers to realise power amplifiers due to their good noise and HF performance. The collector emitter breakdown with open base (BVCEO) is in first order limiting the HBT operation conditions, especially for high output power where it is useful to utilise the complete voltage swing. In real applications with an ohmic connection of the base to a voltage source the breakdown condition can be released. We deliver a new formula for the emitter collector breakdown BVCER as a function of the external base resistor, the emitter base voltage and the temperature. A safe operating area (SOA) is defined enabling the reliable usage of HBTs for emitter collector voltages higher than BVCEO depending on base emitter voltage range and temperatures.
Keywords :
heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device measurement; collector emitter breakdown; emitter base voltage; emitter collector voltages; heterojunction bipolar transistor; ohmic connection; power amplifiers; safe operating area; voltage swing; Breakdown voltage; Charge carrier processes; Circuits; Difference equations; Diodes; Electron emission; Heterojunction bipolar transistors; Performance evaluation; Resistors; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555195
