• DocumentCode
    2734188
  • Title

    Unified electro-thermal stability criterion for bipolar transistors

  • Author

    Vanhoucke, T. ; Hurkx, G.A.M.

  • Author_Institution
    Philips Res. Leuven, Belgium
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    37
  • Lastpage
    40
  • Abstract
    We present a unified electro-thermal criterion for quantifying the stability region of bipolar transistors. The criterion can be used for process optimization or circuit design. We propose a new figure-of-merit as the maximum VCE at which the current at peak fT can be applied without electro-thermal runaway.
  • Keywords
    avalanche breakdown; bipolar transistors; circuit stability; semiconductor device breakdown; avalanche breakdown; bipolar transistors; circuit design; electro-thermal runaway; electro-thermal stability criterion; process optimization; stability region; Bipolar transistors; Breakdown voltage; Circuit stability; Electrothermal effects; Modems; Stability analysis; Stability criteria; Temperature; Thermal resistance; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555196
  • Filename
    1555196
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2734188