DocumentCode :
2734188
Title :
Unified electro-thermal stability criterion for bipolar transistors
Author :
Vanhoucke, T. ; Hurkx, G.A.M.
Author_Institution :
Philips Res. Leuven, Belgium
fYear :
2005
fDate :
9-11 Oct. 2005
Firstpage :
37
Lastpage :
40
Abstract :
We present a unified electro-thermal criterion for quantifying the stability region of bipolar transistors. The criterion can be used for process optimization or circuit design. We propose a new figure-of-merit as the maximum VCE at which the current at peak fT can be applied without electro-thermal runaway.
Keywords :
avalanche breakdown; bipolar transistors; circuit stability; semiconductor device breakdown; avalanche breakdown; bipolar transistors; circuit design; electro-thermal runaway; electro-thermal stability criterion; process optimization; stability region; Bipolar transistors; Breakdown voltage; Circuit stability; Electrothermal effects; Modems; Stability analysis; Stability criteria; Temperature; Thermal resistance; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
Type :
conf
DOI :
10.1109/BIPOL.2005.1555196
Filename :
1555196
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2734188
بازگشت