Title :
MOCVD growth of (Ga1-xInAs-GaAs1-ySby ) superlattices on InP showing type-II emission at wavelengths beyond 2 μm
Author :
Peter, M. ; Winkler, K. ; Herres, N. ; Fuchs, F. ; Muller, S. ; Bachem, K.H. ; Wagner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
We report on (Ga1-xInxAs-GaAs1-ySby) superlattices grown strain-compensated on (100) InP:Fe substrates using metal organic chemical vapor deposition. Low temperature photoluminescence measurements show a spatially indirect type-II recombination of electrons in the conduction band of the Ga1-xInxAs and holes in the valence band of the GaAs1-ySby layers at 2.20 μm. Type-II emission was observed up to room-temperature with 300 K emission centered at 2.30 μm. The valence and conduction band offsets between strain-compensated Ga0.42In0.58As and GaAs1-y Sby (y≈0.2 to 0.3) layers were estimated to 0.21 eV and 0.33-0.39 eV, respectively
Keywords :
III-V semiconductors; MOCVD; conduction bands; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor superlattices; valence bands; 293 K; GaInAs-GaAsSb; InP:Fe; InP:Fe substrates; MOCVD; band offsets; conduction band; electron-hole recombination; photoluminescence; strain-compensated layers; superlattices; type-II emission; valence band; Atomic force microscopy; Chemical vapor deposition; Electromagnetic interference; Indium phosphide; Laser sintering; Lattices; MOCVD; Metallic superlattices; Molecular beam epitaxial growth; Substrates;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711576
