Title :
Statistical modeling of high-frequency bipolar transistors
Author :
Schroter, M. ; Wittkopf, H. ; Kraus, W.
Author_Institution :
Dept. of ECE, Univ. of California San Diego, La Jolla, CA, USA
Abstract :
An overview on existing approaches for statistical modeling of bipolar transistors is given with emphasis on practically feasible statistical simulation of analog/h.f. circuits. A suitable approach is outlined and applied to both device simulation and experimental fab data.
Keywords :
bipolar transistors; semiconductor device models; analog circuits; high-frequency bipolar transistors; high-frequency circuits; statistical modeling; statistical simulation; Analog circuits; Bipolar transistors; Circuit optimization; Circuit simulation; Costs; Design methodology; Integrated circuit modeling; Manufacturing processes; Predictive models; Semiconductor device modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555200
