Improved vertical PNP collector-base breakdown using 2D Monte-Carlo TCAD simulations

Author

Stricker, Andreas D. ; Voegeli, Benjamin T. ; Feilchenfeld, Natalie B. ; Rainey, Beth A. ; Gautsch, Michael L.

Author_Institution

IBM Syst. & Technol. Group, Technol. Dev. & Alliances, Essex Junction, VT, USA

fYear

2005

fDate

9-11 Oct. 2005

Firstpage

66

Lastpage

69

Abstract

Using TCAD simulations the collector-base break down voltage (BVcbo) of a vertical PNP transistor implemented in IBM´s 0.18 μm BiCMOS SiGe 7WL technology was optimized. A novel two dimensional (2D) ion implant scattering phenomenon at the edge of the collector mask was isolated and characterized. TCAD simulations helped to identify the problem, and find the optimal design point for its solution, which then was confirmed by measurements on hardware.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; Monte Carlo methods; circuit simulation; collision processes; heterojunction bipolar transistors; ion implantation; masks; semiconductor device breakdown; semiconductor device models; semiconductor process modelling; technology CAD (electronics); 0.18 micron; 2D Monte-Carlo TCAD simulations; 2D ion implant scattering phenomenon; BiCMOS technology; SiGe; TCAD modeling; collector mask; collector-base break down voltage; heterojunction bipolar transistors; mask edge effect; semiconductor process modeling; vertical PNP collector-base breakdown; vertical PNP transistor; BiCMOS integrated circuits; Bipolar transistors; Electric breakdown; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Impurities; Scattering; Semiconductor process modeling; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Print_ISBN

0-7803-9309-0

Type

conf

DOI

10.1109/BIPOL.2005.1555202

Filename

1555202